清华大学 Xue group

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2006 publications

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2006 publications

 

 

1.       L. Y. Ma, L. Tang, Z. L. Guan, K. He, K. An, X. C. Ma, J. F. Jia, Q. K. Xue, Y. Han, Huang, and F. Liu “Quantum size effect on adatom surface diffusion”, Phys. Rev. Lett. 97, 266102 (2006).

2.       L. X. Zhang, E. G. Wang, Q. K. Xue, S. B. Zhang, and Z. Y. Zhang, “Generalized electron counting in determination of metal-induced reconstruction of compound semiconductor surfaces”, Phys. Rev. Lett. 97, 126103 (2006).

3.       S. C. Li, X. C. Ma, J. F. Jia, Y. F. Zhang, D. M. Chen, Q. Niu, F. Liu, P. S. Weiss,and Q. K. Xue, “Influence of quantum size effects on Pb island growth and diffusion barrier oscillations”, Phys. Rev. B 74, 075410 (2006).

4.       Y. Z. Wu, C. Won, E. Rotenberg, H. W. Zhao, Q. K. Xue, W. Kim, T. L. Owens,  N. V. Smith, and Z. Q. Qiu, “Resonant interaction between two Cu quantum wells investigated by angle-resolved photoemission spectroscopy”, Phys. Rev. B 73, 125333 (2006).

5.       L. L. Wang, X. C. Ma, P. Jiang, Y. S. Fu, S. H. Ji, J. F. Jia, and Q. K. Xue, “Uniform Pb nanowires of magic thickness on Si(111) controlled by elastic interaction and quantum size effects”, Phys. Rev. B 74, 073404 (2006).

6.       S. C. Li, Y. Han, J. F. Jia, Q. K. Xue, and F. Liu, “Determination of the Ehrlich-Schwoebel barrier in epitaxial growth of thin films”, Phys. Rev. B 74, 195428 (2006).

7.       T. Z. Han, G. C. Dong, Q. T. Shen, Y. F. Zhang, J. F. Jia, and Q. K. Xue, “Adhesion modulation by quantum size effects in Pb/Si(111) system”, Appl. Phys. Lett. 89, 183109 (2006).

8.       S. C. Li, J. F. Jia, X. C. Ma, Q. K. Xue, Y. Han, and F. Liu, “Fabricating artificial nanowells with tunable size and shape by using scanning tunneling microscopy”, Appl. Phys. Lett. 89, 123111 (2006).

9.       Z. T. Wang, T. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, J.  Kouvetakis, and I. S. T. Tsong, “Effect of nitridation on the growth of GaN on ZrB2 (0001)/Si(111) by molecular-beam epitaxy”, J. Appl. Phys. 100, 033506 (2006).

10.   L. Xi, L. Y. Ma, K. He, Z. T. Wang, Q. K. Xue, X. D. Xiao, and W. M. Lau, “Study of Fe deposition onto 3 × 3-Al/Si(111) template by scanning tunneling microscopy”, Surf. Sci. 600, 3072 (2006).

11.   K. He, L. Y. Ma, X. C. Ma, J. F. Jia, and Q. K. Xue, “Two-dimensional growth of Fe thin films with perpendicular magnetic anisotropy on GaN(0001)”, Appl. Phys. Lett. 88, 232503 (2006).

12.   K. Wang, S. D. Yao, L. N. Hou, Z. B. Ding, H. T. Yuan, X. L. Du, and Q. K. Xue,  “Depth-dependent elastic strain in ZnO/Zn0.9Mg0.1O/ZnO heterostructure studied by Rutherford backscattering/channeling”, Acta Phys. Sin. 55, 2892 (2006).

13.   K. He, M. H. Pan, J. Z. Wang, H. Liu, J. F. Jia, and Q. K. Xue, “Growth and magnetism of self-organized Co nanoplatelets on Si(111) surface”, Surf. Interface Anal. 38, 1028 (2006).

14.   S. D. Liu, M. T. Cheng, H. J. Zhou, Y. Y. Li, Q. Q. Wang, and Q. K. Xue, “The effect of biexciton, wetting layer leakage and Auger capture on Rabi oscillation damping in quantum dots”, Acta Phys. Sin. 55, 2122 (2006).

15.   Y. Z. Liu, M. J. Ying, X. L. Du, J. F. Jia, Q. K. Xue, X. D. Han, and Z. Zhang, “30 degrees rotation domains in wurtzite ZnO films”, J. Cryst. Growth 290, 631 (2006).

16.   Y. Y. Li, M. T. Cheng, H. J. Zhou, S. D. Liu, Q. Q. Wang, and Q. K. Xue, “Efficiency of single photon emission in three-level system of semiconductor quantum dots with pulsed excitation”, Acta. Phys. Sin. 55, 1781 ( 2006).

17.   Z. X. Mei, Y. Wang, X. L. Du, Z. Q. Zeng, M. J. Ying, H. Zheng, J. F. Jia, Q. K. Xue,  and Z. Zhang, “Growth of In2O3 single crystalline film on sapphire (0001) substrate by molecular beam epitaxy”, J. Cryst. Growth 289, 686 (2006).

18.   R. F. Dou, X. C. Ma, L. Xi, H. L. Yip, K. Y. Wong, W. M. Lau, J. F. Jia, Q. K. Xue,  W. S. Yang, H. Ma, and A. K. Y. Jen, “Self-assembled monolayers of aromatic thiols stabilized by parallel-displaced pi-pi stacking interactions”, Langmuir 22, 3049 (2006).

19.   M. T. Cheng, H. J. Zhou, S. D. Liu, Q. Q. Wang, and Q. K. Xue, “Quantum interference and population swapping in single quantum dots with V-type three-level”, Solid State Commun. 137, 405 (2006).

 

 

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