2011 publications
1. C. L. Song, Y. L. Wang, P. Cheng, Y. P. Jiang, W. Li, T. Zhang, Z. Li, K. He, L. L.Wang, J. F. Jia, H. H. Hung, C. J. Wu, X. C. Ma, X. Chen, and Q. K. Xue, “Direct observation of nodes and twofold symmetry in FeSe superconductor”, Science 332, 1410 (2011).
2. Q. K. Xue, “A topological twist for transistors”, Nat. Nanotechnol. 6, 197 (2011).
3. J. S. Zhang, C. Z. Chang, Z. C. Zhang, J. Wen, X. Feng, K. Li, M. H. Liu, K. He, L.L.Wang, X. Chen, Q. K. Xue, X. C. Ma, and Y. Y. Wang, “Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators”, Nat. Commun. 2, 574 (2011).
4. H. T. Yuan, H. W. Liu, H. Shimotani, H. Guo, M. W. Chen, Q. K. Xue, and Y. Iwasa, “Liquid-Gated Ambipolar Transport in Ultrathin Films of a Topological Insulator Bi2Te3”, Nano Lett. 11, 2601 (2011).
5. Q. Zhang, X. Y. Shan, X. Feng, C. X. Wang, Q. Q. Wang, J. F. Jia, and Q. K. Xue, “Modulating resonance modes and Q value of a CdS nanowire cavity by single Ag nanoparticles”, Nano Lett. 11, 4270 (2011).
6. G. Wang, X. G. Zhu, Y. Y. Sun, Y. Y. Li, T. Zhang, J. Wen, X. Chen, K. He, L. L.Wang, X. C. Ma, J. F. Jia, S. B. Zhang, and Q. K. Xue, “Topological insulator thin films of Bi2Te3 with controlled electronic structure”, Adv. Mater. 23, 2929 (2011).
7. X. Chen, X. C. Ma, K. He, J. F. Jia, and Q. K. Xue, “Molecular beam epitaxial growth of topological insulators”, Adv. Mater. 23, 1162 (2011).
8. Y. P. Jiang, Q. Qi, R. Wang, J. Zhang, Q. K. Xue, C. Wang, C. Jiang, and X. H. Qiu, “Direct observation and measurement of mobile charge carriers in a monolayer organic semiconductor on a dielectric substrate”, ACS Nano 5, 6195 (2011).
9. C. L. Song, Y. L. Wang, Y. P. Jiang, Z. Li, L. L. Wang, K. He, X. Chen, X. C. Ma,and Q. K. Xue, “Molecular-beam epitaxy and robust superconductivity of stoichiometric FeSe crystalline films on bilayer graphene”, Phys. Rev. B 84, 020503 (2011).
10. J. Wang, W. Li, P. Cheng, C. L. Song, T. Zhang, P. Deng, X. Chen, X. C. Ma, K.He, J. F. Jia, Q. K. Xue, and B. F. Zhu, “Power-law decay of standing waves on the surface of topological insulators”, Phys. Rev. B 84, 235447 (2011).
11. J. Z. Wang, M. Lan, T. N. Shao, G. Q. Li, Y. Zhang, C. Z. Huang, Z. H. Xiong, X.C. Ma, J. F. Jia, and Q. K. Xue, “STM study of a rubrene monolayer on Bi(001): Structural modulations”, Phys. Rev. B 83, 235433 (2011).
12. J. Wang, A. M. DaSilva, C. Z. Chang, K. He, J. K. Jain, N. Samarth, X. C. Ma,Xue, Q. K. Xue, and M. H. W. Chan, “Evidence for electron-electron interaction in topological insulator thin films”, Phys. Rev. B 83, 245438 (2011).
13. H. Guo, K. Sugawara, A. Takayama, S. Souma, T. Sato, N. Satoh, A. Ohnishi, M. Kitaura, M. Sasaki, Q. K. Xue, and T. Takahashi, “Evolution of surface states in Bi1−xSbx alloys across the topological phase transition”, Phys. Rev. B 83, 201104 (2011).
14. M. H. Liu, C. Z. Chang, Z. C. Zhang, Y. Zhang, W. Ruan, K. He, L. L. Wang, X. Chen,J. F. Jia, S. C. Zhang, Q. K. Xue, X. C. Ma, and Y. Y. Wang, “Electron interaction dirven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit”, Phys. Rev. B 83, 165440 (2011).
15. G. F. Sun, Y. Liu, S. H. Rhim, J. F. Jia, Q. K. Xue, M. Weinert, and L. Li, “Si diffusion path for pit-free graphene growth on SiC(0001)”, Phys. Rev. B 84, 195455 (2011).
16. J. F. Jia, X. C. Ma, X. Chen, T. Sakurai, and Q. K. Xue, “STM and MBE: One of the best combinations”, J. Phys. D: Appl. Phys. 44, 464007 (2011).
17. H. Zheng, Z. X. Mei, Z. Q. Zeng, Y. Z. Liu, L. W. Guo, J. F. Jia, Q. K. Xue, Z. Zhang, and X. L. Du, “Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes”, Thin Solid Films 520, 445 (2011).
18. M. J. Xu, X. M. Dou, J. F. Jia, Q. K. Xue, Y. F. Zhang, A. Okada, S. Yoshida, and H. Shigekawa, “Scanning tunneling microscopy observation of surface superstructures during the growth of In on In/Si(111) surface”, Thin Solid Films 520, 328 (2011).
19. H. W. Liu, L. Zhang, X. Y. Lang, Y. Yamaguchi, H. Iwasaki, Y. Inouye, Q. K. Xue, and M. W. Chen, “Single molecule detection from a large-scale SERS-active Au79Ag21 substrate”, Sci. Rep. 1, 112 (2011).
20. Y. L. Wang, Y. Xu, Y. P. Jiang, J. W. Liu, C. Z. Chang, M. Chen, Z. Li, C. L. Song, L.L. Wang, K. He, X. Chen, W. H. Duan, Q. K. Xue, and X. C. Ma, “Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3”, Phys. Rev. B 84, 075335 (2011).
21. C. X. Wang, Y. Chen, Y. Z. Fan, Y. W. Zhang, Q. Y. Liang, Y. D. Wu, D. M. Li, J. F.Jia, Q. K. Xue, Z. Q. Zhao, Q. B. Meng, and S. L. Zhang, “Study on the mechanism of visible absorption enhancement for N + implanted TiO2 by Raman spectroscopy”, Surf. Rev. Lett. 18, 135 (2011).
22. J. Ren, S. Meng, Y. L. Wang, X. C. Ma, Q. K. Xue, and E. Kaxiras, “Properties of copper (fluoro-)phthalocyanine layers deposited on epitaxial graphene”, J. Chem. Phys. 134, 194706 (2011).
23. Y. F. Wang, W. J. Zhou, A. J. Liu, W. Chen, F. Y. Fu, X. Y. Yan, B. Jiang, Q. K. Xue, and W. H. Zheng, “Optical properties of the crescent and coherent applications”, Optics Express 19, 8303 (2011).
24. D. Hao, C. L. Song, Y. X. Ning, Y. L. Wang, L. L. Wang, X. C. Ma, X. Chen, andQ. K. Xue, “Self-assembly of manganese phthalocyanine on Pb(111) surface: A scanning tunneling microscopy study”, J. Chem. Phys. 134, 154703 (2011).
25. D. H. Deng, X. L. Pan, L. Yu, Y. Cui, Y. P. Jiang, J. Qi, W. X. Li, Q. Fu, X. C.Ma, Q. K. Xue, G. Q. Sun, and X. H. Bao, “Toward n-doped graphene via solvothermal synthesis”, Chem. Mater. 23, 1188 (2011).
26. W. J. Li, Y. J. Sun, X. G. Zhu, G. Wang, Y. F. Zhang, J. F. Jia, X. C. Ma, X. Chen, and Q. K. Xue, “Growth and stability of ultra-thin Pb films on Pb/Si(111)-α- 3× 3”, Surf. Rev. Lett. 18, 77 (2011).
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