Magnetic skyrmions are recognized as potential information carriers for building the next-generation spintronic memory and logic devices. Towards functional device applications, efficient electrical detection of skyrmions at room temperature is one of the most important prerequisites. Magnetic tunnel junctions (MTJs) offer a technologically feasible solution by using spin-dependent tunneling of electrons, which can output the presence and absence of skyrmion as the pronounced tunneling magnetoresistance (TMR). However, a successful integration of skyrmionic films with MTJ stacks, together with the subsequent electrical detection of mobile skyrmions, is limited by several important factors, which will be systematically addressed in this study. In particular, we will show our optimization strategy of integrating the multilayer [Pt/Co/Ta] 10 that hosts room temperature skyrmions, with the Ta (spacer)/CoFeB 1/MgO …
https://iopscience.iop.org/article/10.1088/0256-307X/42/4/047502/meta