In this paper, the growth of rare‐earth‐free compensated ferrimagnet (C‐FIM) Mn4N single crystalline films is reported, with perpendicular magnetic anisotropy (PMA) on the MgO(001) substrates by reactive magnetron sputtering. Subsequently, the current‐induced spin‐orbit torque (SOT) switching is experimentally demonstrated through passing currents in the Hall bar device made of Mn4N/Pt bilayer, with the thickness of Mn4N approaching 60 nm. Furthermore, the accompanied SOT efficiencies are characterized by employing the harmonic Hall voltage measurements. In particular, an enhanced effective SOT efficiency with the increased thickness of Mn4N films is observed, suggesting the existence of a bulk‐like spin torque in the present material system. The results demonstrate that the perpendicularly magnetized C‐FIM Mn4N films can provide a promising material platform for developing the rare‐earth‐free …
https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.202100772